pd - 9.1263e hexfet ? power mosfet top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss = -20v r ds(on) = 0.09 w fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. micro8 l generation v technology l ultra low on-resistance l p-channel mosfet l very small soic package l low profile (<1.1mm) l available in tape & reel l fast switching IRF7604 12/9/97 description parameter max. units i d @ t a = 25c continuous drain current, v gs @ -4.5v -3.6 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.9 a i dm pulsed drain current ? -19 p d @t a = 25c power dissipation 1.8 w linear derating factor 14 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings all micro8 data sheets reflect improved thermal resistance, power and current -handling ratings- effective only for product marked with date code 505 or later . parameter typ. max. units r q ja maximum junction-to-ambient ? CCC 70 c/w thermal resistance
IRF7604 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.022 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.090 v gs = -4.5v, i d = -2.4a ? CCC CCC 0.13 v gs = -2.7v, i d = -1.2a ? v gs(th) gate threshold voltage -0.70 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 2.6 CCC CCC s v ds = -10v, i d = -1.2a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 13 20 i d = -2.4a q gs gate-to-source charge CCC 2.6 3.9 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 5.6 9.0 v gs = -4.5v, see fig. 6 and 9 ? t d(on) turn-on delay time CCC 17 CCC v dd = -10v t r rise time CCC 53 CCC i d = -2.4a t d(off) turn-off delay time CCC 31 CCC r g = 6.0 w t f fall time CCC 38 CCC r d = 4.0 w, see fig. 10 ? c iss input capacitance CCC 590 CCC v gs = 0v c oss output capacitance CCC 330 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 170 CCC ? = 1.0mhz, see fig. 5 w a na ns i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -2.4a, di/dt -96a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.4a, v gs = 0v ? t rr reverse recovery time CCC 41 62 ns t j = 25c, i f = -2.4a q rr reverse recovery charge CCC 38 57 nc di/dt = 100a/s ? source-drain ratings and characteristics a CCC CCC -19 CCC CCC -1.8 s d g ? surface mounted on fr-4 board, t 10sec.
IRF7604 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 2. typical output characteristics fig 4. normalized on-resistance vs. temperature 0.01 0.1 1 10 100 0.1 1 10 d ds 20s pulse w idth t = 25c a -i , drain-to-source current (a) -v , drain-to-source volta g e (v) j -1.5v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v 0.01 0.1 1 10 100 0.1 1 10 d ds 20s pulse w idth t = 150c a -i , drain-to-source current (a) -v , drain-to-source volta g e (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.01 0.1 1 10 100 1.5 2.5 3.5 4.5 t = 25c t = 150c j j gs d a -i , d rain-to-source c urrent (a) -v , gate-to-source volta g e ( v ) v = -10v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) a i = -2.4a v = -4.5v d gs
IRF7604 fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2 4 6 8 10 048121620 g gs a -v , g ate-to-source voltage (v) q , total g ate charge (nc) i = -2.4a v = -16v d ds for test circuit see figure 9 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d a j 100s 1ms 10ms 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1m hz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain volta g e (v) fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage
IRF7604 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit fig 10b. switching time waveforms v ds v pulse width 1 s duty factor 0.1 % v gs v dd r g d.u.t. fig 9a. basic gate charge waveform q g q gs q gd v g charge fig 9b. gate charge test circuit v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - + - - 4.5 -4.5 v ds 90% 10% v gs t d(on) t r t d(off) t f
IRF7604 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity for p-channel ** use p-channel driver for p-channel measurements * v gs * ** [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 12. for p-channel hexfets
IRF7604 package outline micro8 outline dimensions are shown in millimeters (inches) micro8 part marking information part number 451 7501 top example : this is an irf7501 date code (yw w) y = last dig it o f year w w = week a inches millimeters min m ax m in m ax a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x q notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 q 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x
IRF7604 tape & reel information micro8 dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction t er m in al n u m b e r 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 12/97
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